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Secondary Chemistry Group IV Elements Notes Zimbabwe

Study Chemistry notes on Group IV Elements for Secondary. Useful for revision, homework, and exam preparation in Zimbabwe.

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Group IV
Cam
1

GROUP IV

General - occurs in the middle of the periodic table
- contains metals and non-metals
- metallic properties increase down group
- stability of +4 oxidation state decreases down group - the 'inert pair' effect
- all have the electronic configuration $\ldots n \mathbf{s}^{2} n \mathbf{p}^{2}$.

\begin{table}
\captionsetup{labelformat=empty}
\caption{ELEMENTS}

  |  C  |  Si  |  Ge  |  Sn  |  Pb
 atomic number  |  6  |  14  |  32  |  &
 electron config.  |  [He] $2 \mathrm{~s}^{2} 2 \mathrm{p}^{2}$  |  [Ne] $3 \mathrm{~s}^{2} 3 \mathrm{p}^{2}$  |  [Ar] $4 \mathrm{~s}^{2}{ }^{4} \mathrm{p}^{2}$  |  $[\mathrm{Kr}] 5 \mathrm{~s}^{2} 5 \mathrm{p}^{2}$  |  [Xe] 6s² $6 \mathrm{p}^{2}$
 atomic radius / nm  |  0.077  |  0.177  |  0.122  |  0.140  |  0.154
 electronegativity  |  2.5  |  1.8  |  1.8  |  1.8  |  1.8
 1st I.E. / kj mol-1  |  1086  |  786  |  760  |  710  |  720
 description  |  non-metal  |  metalloid  |  metalloid  |  metal  |  metal
 bonding  |  gaint covalent  |  giant covalent  |  giant covalent  |  metallic  |  metallic
 melting point / ${ }^{\circ} \mathrm{C}$  |  3550 (diam)  |  1410  |  940  |  232  |  328
 boiling point $/\left({ }^{\circ} \mathrm{C}\right.$  |  4830 (diam)  |  2680  |  2830  |  2690  |  1751
 electrical conductivity  |  graphite - good diamond - poor  |  semiconductor  |  semiconductor  |  good  |  good

\end{table}

TRENDS

 Melting Point  |  General decrease down group  |  & C  |  Si  |  Ge  |  Sn  |  Pb
  |  Melting point $/{ }^{\circ} \mathrm{C}$  |  & 3550  |  1410  |  940  |  232  |  328
 \multicolumn{8}{|c|}{
- change from giant molecular to metallic bonding
- many bonds need to be broken to separate the atoms in giant molecules
- the larger the atoms the weaker the covalent bond
}
 \multirow[t]{5}{*}{Electrical conductivity}  |  \multicolumn{7}{|c|}{
C diamond
poor graphite good
}
  |  Si  |  & semiconductor  |  \multicolumn{4}{|l|}{\multirow[b]{4}{*}{
metallic bonding - delocalised electron cloud
metallic bonding - delocalised electron cloud
}}
  |  Ge  |  & semiconductor  |  &  |  &
  |  Sn  |  good  |  &  |  &  |
  |  Pb  |  good  |  &  |  &  |